Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect

Using the dielectric continuum (DC) and three-dimensional phonon (3DP) models, energy relaxation of the hot electrons in the quasi-two-dimensional channel of lattice-matched InAlN/AlN/GaN heterostructures is studied theoretically, taking into account non-equilibrium polar optical phonons, electron degeneracy, and screening from the mobile electrons. The electron power dissipation and energy relaxation time due to both half-space and interface phonons are calculated as functions of the electron temperature Te using a variety of phonon lifetime values from experiment, and then compared with those evaluated by the 3DP model. Thereby particular attention is paid to examination of the 3DP model to use for the hot-electron relaxation study. The 3DP model yields very close results to the DC model: with no hot phonons or screening the power loss calculated from the 3DP model is 5% smaller than the DC power dissipation, whereas slightly larger 3DP power loss (by less than 4% with a phonon lifetime from 0.1 to 1 ps) is obtained throughout the electron temperature range from room temperature to 2500 K after including both the hot-phonon effect (HPE) and screening. Very close results are obtained also for energy relaxation time with the two phonon models (within a 5% of deviation). However the 3DP model is found to underestimate the HPE by 9%. The Mori-Ando sum rule is restored by which it is proved that the power dissipation values obtained from the DC and 3DP models are in general different in the pure phonon emission process, except when scattering with interface phonons is sufficiently weak, or when the degenerate modes condition is imposed, which is also consistent with Register’s scattering rate sum rule. The discrepancy between the DC and 3DP results is found to be caused by how much the high-energy interface phonons contribute to the energy relaxation: their contribution is enhanced in the pure emission process but is dramatically reduced after including the HPE. Our calculation with both phonon models has obtained a great fall in energy relaxation time at low electron temperatures (Te < 750 K) and slow decrease at the high temperatures with the use of decreasing phonon lifetime with Te. The calculated temperature dependence of the relaxation time and the high-temperature relaxation time ∼0.09 ps are in good agreement with experimental results

Effect of frequency and temperature on microwave-induced magnetoresistance oscillations in two-dimensional electron systems

Experimental results on microwave-induced magnetoresistance oscillation in two-dimensional electron systems show a similar behavior of these systems regarding temperature and microwave frequency. It is found that these oscillations tend to quench when frequency or temperature increase, approaching magnetoresistance to the response of the dark system. In this work we show that this experimental behavior can be addressed on the same theoretical basis. Microwave radiation forces the electron orbits to move back and forth being damped by interaction with the lattice. We show that this damping depends dramatically on microwave frequency and also on temperature. An increase in frequency or temperature gives rise to an increase in the lattice damping producing eventually a quenching effect in the magnetoresistance oscillations.Comment: 3 pages and 3 figure

Population inversion in optically pumped asymmetric quantum well terahertz lasers

Intersubband carrier lifetimes and population ratios are calculated for three- and four-level optically pumped terahertz laser structures. Laser operation is based on intersubband transitions between the conduction band states of asymmetric GaAs-Ga(1 – x)Al(x)As quantum wells. It is shown that the carrier lifetimes in three-level systems fulfill the necessary conditions for stimulated emission only at temperatures below 200 K. The addition of a fourth level, however, enables fast depopulation of the lower laser level by resonant longitudinal optical phonon emission and thus offers potential for room temperature laser operation. © 1997 American Institute of Physics

Effect of nano-scale surface roughness on transverse energy spread from GaAs photocathodes

High quantum yield, low transverse energy spread and prompt response time make GaAs activated to negative electron affnity, an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. We show that a nanoscale surface roughness can affect the transverse electron spread from GaAs by nearly an order of magnitude and explain the seemingly controversial experimental results obtained so far. This model can also explain the measured dependence of transverse energy spread on the wavelength of incident light.Comment: 3pages, 3figure

Dispersion and the electron-phonon interaction in a single heterostructure

We investigate the electron-phonon interaction in a polar-polar single heterostructure through the use of the linear combination of hybrid phonon modes, considering the role of longitudinal optical, transverse optical and interface modes, using a continuum model that accounts for both mechanical and electrical continuity over a heterostructure interface. We discuss the use of other models for such systems, such as the bulk phonon (3DP) and dielectric continuum (DC) models, using previously developed sum-rules to explain the limitations on their validity. We find that our linear combination (LC) model gives an excellent agreement with scattering rates previously derived using the 3DP and DC models when the lattice dispersion is weak enough to be ignored, however, when there is a noticeable lattice dispersion, the LC model returns a different answer, suggesting that interface modes play a much greater part in the scattering characteristics of the system under certain conditions. We also discuss the remote phonon effect in polar/polar heterostructures

Momentum relaxation due to polar optical phonons in AlGaN/GaN heterostructures

Using the dielectric continuum (DC) model, momentum relaxation rates are calculated for electrons confined in quasi-two-dimensional (quasi-2D) channels of AlGaN/GaN heterostructures. Particular attention is paid to the effects of half-space and interface modes on the momentum relaxation. The total momentum relaxation rates are compared with those evaluated by the three-dimensional phonon (3DP) model, and also with the Callen results for bulk GaN. In heterostructures with a wide channel (effective channel width >100 Å), the DC and 3DP models yield very close momentum relaxation rates. Only for narrow-channel heterostructures do interface phonons become important in momentum relaxation processes, and an abrupt threshold occurs for emission of interface as well as half-space phonons. For a 30-Å GaN channel, for instance, the 3DP model is found to underestimate rates just below the bulk phonon energy by 70% and overestimate rates just above the bulk phonon energy by 40% compared to the DC model. Owing to the rapid decrease in the electron-phonon interaction with the phonon wave vector, negative momentum relaxation rates are predicted for interface phonon absorption in usual GaN channels. The total rates remain positive due to the dominant half-space phonon scattering. The quasi-2D rates can have substantially higher peak values than the three-dimensional rates near the phonon emission threshold. Analytical expressions for momentum relaxation rates are obtained in the extreme quantum limits (i.e., the threshold emission and the near subband-bottom absorption). All the results are well explained in terms of electron and phonon densities of states

Negative differential resistance associated with hot phonons

We predict the existence of a hot-phonon negative differential resistance (NDR) in GaN. We show that this is a consequence of a wave-vector dependence of lifetime caused by the effect of coupled plasmon-phonons. Anti-screened long-wavelength modes have shorter lifetimes, screened shorter-wavelength modes have longer lifetimes, the boundary between them being determined by the temperature-dependent Landau damping. The higher density of screened modes means that the average lifetime is of order of the lifetime of the bare phonon. Its increase with electron temperature (field) is responsible for the NDR. We also find that the momentum relaxation rate (MRR) associated with the absorption of phonons can be negative in some circumstances, which can be seen to be a consequence of the non-uniform distribution of hot phonons in wave-vector space. We also point out that the ultra-short lifetimes sometimes deduced from experiment should more properly be regarded as electron energy- relaxation times

Microwave-induced resistance oscillations and zero-resistance states in 2D electron systems with two occupied subbands

We report on theoretical studies of recently discovered microwave-induced resistance oscillations and zero resistance states in Hall bars with two occupied subbands. In the same results, resistance presents a peculiar shape which appears to have a built-in interference effect not observed before. We apply the microwave-driven electron orbit model, which implies a radiation-driven oscillation of the two-dimensional electron system. Thus, we calculate different intra and inter-subband electron scattering rates and times that are revealing as different microwave-driven oscillations frequencies for the two electronic subbands. Through scattering, these subband-dependent oscillation motions interfere giving rise to a striking resistance profile. We also study the dependence of irradiated magnetoresistance with power and temperature. Calculated results are in good agreement with experiments.Comment: 7 pages, 6 figure